Typical Characteristics
20
V GS = -4.5V
3
V GS = -1.5V
15
-2.5V
-2.0V
-1.8V
2.5
2
-1.8V
10
-1.5V
1.5
-2.0V
-2.5V
5
0
1
0.5
-4.5V
0
1
2
3
0
5
10
15
20
-V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
0.12
-I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
T A = 125 C
T A = 25 C
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
I D = -5.5A
V GS = -4.5V
0.09
0.06
0.03
0
o
o
I D = -2.8 A
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T J , JUNCTION TEMPERATURE ( C)
o
Figure 3. On-Resistance Variation
withTemperature.
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
10
V GS = 0V
T A = -55 C
25 C
15
V DS = -5V
o
o
1
T A = 125 o C
125 C
10
5
0
o
0.1
0.01
0.001
0.0001
25 o C
-55 o C
0
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC604P Rev C(W)
相关PDF资料
FDC606P MOSFET P-CH 12V 6A SSOT-6
FDC608PZ MOSFET P-CH 20V 5.8A SSOT-6
FDC610PZ MOSFET P-CH 30V 4.9A SSOT-6
FDC6301N IC FET DGTL N-CH DUAL 25V SSOT6
FDC6302P MOSFET P-CH DUAL 25V SSOT6
FDC6303N IC FET DGTL N-CH DUAL 25V SSOT6
FDC6304P MOSFET P-CH DUAL 25V SSOT-6
FDC6305N MOSFET N-CHAN DUAL 20V SSOT6
相关代理商/技术参数
FDC604P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6
FDC604P_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET
FDC606P 功能描述:MOSFET SuperSOT-3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC606P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SUPERSOT-6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SMD, SUPERSOT-6
FDC606P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC606P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC606P Series 20 V 26 mOhms P-Channel 1.8V Specified PowerTrench Mosfet SSOT-6
FDC608PZ 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC610PZ 功能描述:MOSFET -30V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube